◆K. Katayama
"Characterization of Oxygen Precipitates in CZ-Silicon Crystals by Light-Scattering Tomography"
Jpn. J. Appl. Phys. 29 (1990) L198
◆K. Katayama, Y. Kirino and F. Shimura
"Non-contact Characterization for Energy Level Related to Silicon Wafer Surface"
in "Defects in Silicon II"
(Eds. W. M. Bullis, U. Goesele and
F. Shimura, The Electrochemical Society, Pennington, NJ, 1991) pp.89
◆K. Katayama and F. Shimura
"LM-DLTS Measurements for CZ Silicon Wafers with Different [Oi], [Cs] and Thermal History"
in "Defects in Silicon II"(Eds. W. M. Bullis, U. Goesele and F. Shimura,
The Electrochemical Society, Pennington, NJ, 1991) pp.97
◆K. Katayama, Y. Kirino and F. Shimura
"Effects of Ultraviolet Light Irradiation on Non-contact Microwave Lifetime Measurement"
Jpn. J. Appl. Phys. 30B (1991) L1907
◆J. Partanen, T. Tuomi and K. Katayama
"Comparison of Defect Images and Density Between Synchrotron Section Topography and
Infrared Light Scattering Microscopy in Heat Treated Czochralski Silicon Crystals"
J. Electrochem. Soc. 139 (1992) 599
◆K. Katayama and F. Shimura
"Non-contact Defect Characterization for CZ Silicon Crystals with FT-IR, LM-Lifetime,
LM-DLTS and Light Scattering Tomography"
in "Diagnostic Techniques for Semiconductor Materials and Devices"
(Eds. J. Benton, G. Maracas and P. Rai-Choudhury, The Electrochemical Society,
Pennington, NJ, 1992) pp.184
◆K. Katayama and F. Shimura
"Non-contact Characterization for Ultraviolet Light Irradiation Effect
on Si-SiO2 Interface"
Jpn. J. Appl. Phys. 8A (1992) L1001
◆A. Buczkowski, K. Katayama, G. A. Rozgonyi and F. Shimura
"Non-contact Mobility Measurement with a Laser/Microwave Photoconductance Technique:
Temperature Dependence"
Appl. Phys. Lett. 60 (1992) 1229
◆L. Zhong, A. Buczkowski, K. Katayama and F. Shimura
"Transient Recovery of Minority-Carrier Lifetime in Silicon After Ultraviolet Irradiation"
Appl. Phys. Lett. 61 (1992) 931
◆K. Katayama and F. Shimura
"Noncontact Characterization for Ultraviolet Light Irradiation on Si-SiO2 Interface"
in "Defects Engineering in Semiconductor Growth, Processing and Device Technology"
(Eds. S. Ashok, J. Chevallier, K. Sumino and E. Weber, Materials Research Society,
Pittsburgh, 1992)
◆K. Katayama, A. Agawal, Z. J. Radzimski and F. Shimura
"Investigation on Defects in CZ Silicon with High-Sensitive Laser/Microwave
Photoconductance Technique"
Jpn. J. Appl. Phys. 32 (1993) 298
◆K. Katayama and F. Shimura
"Noncontact Characterization for Carrier Recombination Center Related to Si-SiO2 Interface"
Jpn. J. Appl. Phys. 32 (1993) L395
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