Ken-ichi KATAYAMA　　Partner, Patent Attorney

EDUCATION ／WORK EXPERIENCE

WORK EXPERIENCE

PUBLICATIONS

◆K. Katayama
"Characterization of Oxygen Precipitates in CZ-Silicon Crystals by Light-Scattering Tomography"
Jpn. J. Appl. Phys. 29 (1990) L198

◆K. Katayama, Y. Kirino and F. Shimura
"Non-contact Characterization for Energy Level Related to Silicon Wafer Surface" in "Defects in Silicon II"
(Eds. W. M. Bullis, U. Goesele and F. Shimura, The Electrochemical Society, Pennington, NJ, 1991) pp.89

◆K. Katayama and F. Shimura
"LM-DLTS Measurements for CZ Silicon Wafers with Different [Oi], [Cs] and Thermal History"
in "Defects in Silicon II"(Eds. W. M. Bullis, U. Goesele and F. Shimura, The Electrochemical Society, Pennington, NJ, 1991) pp.97

◆K. Katayama, Y. Kirino and F. Shimura
"Effects of Ultraviolet Light Irradiation on Non-contact Microwave Lifetime Measurement"
Jpn. J. Appl. Phys. 30B (1991) L1907

◆J. Partanen, T. Tuomi and K. Katayama
"Comparison of Defect Images and Density Between Synchrotron Section Topography and
Infrared Light Scattering Microscopy in Heat Treated Czochralski Silicon Crystals"
J. Electrochem. Soc. 139 (1992) 599

◆K. Katayama and F. Shimura
"Non-contact Defect Characterization for CZ Silicon Crystals with FT-IR, LM-Lifetime, LM-DLTS and Light Scattering Tomography"
in "Diagnostic Techniques for Semiconductor Materials and Devices" (Eds. J. Benton, G. Maracas and P. Rai-Choudhury, The Electrochemical Society, Pennington, NJ, 1992) pp.184

◆K. Katayama and F. Shimura
"Non-contact Characterization for Ultraviolet Light Irradiation Effect on Si-SiO2 Interface"
Jpn. J. Appl. Phys. 8A (1992) L1001

◆A. Buczkowski, K. Katayama, G. A. Rozgonyi and F. Shimura
"Non-contact Mobility Measurement with a Laser/Microwave Photoconductance Technique: Temperature Dependence"
Appl. Phys. Lett. 60 (1992) 1229

◆L. Zhong, A. Buczkowski, K. Katayama and F. Shimura
"Transient Recovery of Minority-Carrier Lifetime in Silicon After Ultraviolet Irradiation"
Appl. Phys. Lett. 61 (1992) 931

◆K. Katayama and F. Shimura
"Noncontact Characterization for Ultraviolet Light Irradiation on Si-SiO2 Interface"
in "Defects Engineering in Semiconductor Growth, Processing and Device Technology"
(Eds. S. Ashok, J. Chevallier, K. Sumino and E. Weber, Materials Research Society, Pittsburgh, 1992)

◆K. Katayama, A. Agawal, Z. J. Radzimski and F. Shimura
"Investigation on Defects in CZ Silicon with High-Sensitive Laser/Microwave Photoconductance Technique"
Jpn. J. Appl. Phys. 32 (1993) 298

◆K. Katayama and F. Shimura
"Noncontact Characterization for Carrier Recombination Center Related to Si-SiO2 Interface"
Jpn. J. Appl. Phys. 32 (1993) L395

◆K. Katayama
"Points of attention on the support requirement in view of foreign patent applications” Intellectual Property Management　Vol.74 No.7 2024　p.894-899

ACTIVITIES

◆Apr. 2021-present　Member of the Central IP Research Institute of JPAA

◆Apr. 2012 –Mar.2020　Member of the International Activities Center of JPAA

◆Apr. 2008-Mar. 2009　Member of the Industrial Competitiveness Promotion Committee

◆Apr. 2003-Mar. 2005　Member of the Training Institute of JPAA

◆Apr. 2002-Mar. 2003　Member of the International Activities Center of JPAA

◆Tutor of 2017 JPAA IP Practitioners Seminar in Hanoi, Vietnam

◆Leader of 2016 JAPP delegation visiting Munich and London

◆Tutor of 2015 JPAA IP Practitioners Seminar in Jakarta, Indonesia

◆Delegate from JPAA attending the Symposium on the topic of the practice around Art. 123(2) EPC held at EPO in 2014

◆Member of 2013 JAPP delegation visiting Munich and London

◆Tutor of 2013 JPAA IP Practitioners Seminar in Bangkok, Thailand

LANGUAGES

PAGETOP